IGBT Type power supply for growth of ingot and use dual power supply. IGBT is a device of semiconductor which has transistor at out put C-E and impedance of gate is very close unlimited as like FET.
Specification
1. Main Supply POWER (Side Heater)
- Input Power : AC 3Φ 200KVA
- Rated Voltage : 440Vac ± 10% 60Hz
- Power factor : More than 90%
- Efficiency : More than 85%
- Output Power Adjustment Range : 3~150KW
- Output Current Range : Max. 2300A (65V)
- Accuracy : Less than ± 0.1% F.S
2. AUX. Supply Power (Bottom Heater)
- Input Power : AC 3Φ 200KVA
- Rated Voltage : 440Vac ± 10% 60Hz
- Power factor : More than 90%
- Efficiency : More than 85%
- Output Power Adjustment Range : 3~50KW
- Output Current Range : Max. 800A (65V)
- Accuracy : Less than ± 0.1% F.S
Machine Features
1. Dual Output: SIDE and Bottom HEATER output at the same time.
2. To use high power factor, reduce extra machine price and operation fee
3. Reduce the material cost by reducing power rates
4. Compact Size and Light weight
5. No noise feature (15~30KHZ)
6. Good power factor at insert power.